An investigation was made of the electroluminescence emitted by porous
silicon when in contact with certain solutions. The electroluminescen
ce was observed at the boundary between porous n-type silicon and stro
ng oxidants characterized by a two-stage mechanism of electron capture
, such as hydrogen peroxide. The integral quantum efficiency of 0.3% w
as-according to the authors' knowledge-a record value for the electrol
uminescence of porous silicon.