TEMPERATURE-DEPENDENCE OF THE STEADY-STATE PHOTOLUMINESCENCE OF POROUS SILICON IN THE VISIBLE PART OF THE SPECTRUM

Authors
LEBEDEV AA REMENYUK AD RUD YV
Citation
Aa. Lebedev et al., TEMPERATURE-DEPENDENCE OF THE STEADY-STATE PHOTOLUMINESCENCE OF POROUS SILICON IN THE VISIBLE PART OF THE SPECTRUM, Semiconductors, 27(11-12), 1993, pp. 1017-1019
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
11-12
Year of publication
1993
Pages
1017 - 1019
Database
ISI
SICI code
1063-7826(1993)27:11-12<1017:TOTSPO>2.0.ZU;2-Z
Abstract
A study was made of the temperature dependence of the photoluminescenc e spectra of porous silicon. An increase in temperature from 77 to 440 K revealed a ''red'' shift and narrowing of the photoluminescence ban d, and it was found that the energy and quantum efficiency of the phot oluminescence of porous silicon were considerably less than the corres ponding parameters of ordinary bulk silicon.