FORMATION OF THE ENERGY-SPECTRUM OF A MONOENERGETIC X-RAY-LINE AS A RESULT OF INHOMOGENEOUS ABSORPTION IN SEMICONDUCTOR-DETECTORS

Citation
Oi. Ivanitskaya et al., FORMATION OF THE ENERGY-SPECTRUM OF A MONOENERGETIC X-RAY-LINE AS A RESULT OF INHOMOGENEOUS ABSORPTION IN SEMICONDUCTOR-DETECTORS, Semiconductors, 27(11-12), 1993, pp. 1038-1042
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
11-12
Year of publication
1993
Pages
1038 - 1042
Database
ISI
SICI code
1063-7826(1993)27:11-12<1038:FOTEOA>2.0.ZU;2-G
Abstract
It is shown that in the case of inhomogeneous absorption (kd is simila r to 1-30) of monoenergetic radiation in the absence of microinhomogen eities and macroinhomogeneities in a detector a strong distortion is s till possible and it may even result in the appearance of two maxima i n the energy spectrum, particularly in the case of similar values of t he electron and hole range when the efficiency of charge collection is low to moderate (25-90%). An analytic expression is obtained and quan titative criteria are given for finding the ranges of the parameters o f a detector responsible for the distortion in the spectrum. The reaso ns for this distortion in the energy spectrum are identified.