ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES

Citation
Lv. Belyakov et al., ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES, Semiconductors, 27(11-12), 1993, pp. 1078-1080
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
11-12
Year of publication
1993
Pages
1078 - 1080
Database
ISI
SICI code
1063-7826(1993)27:11-12<1078:ROLITF>2.0.ZU;2-5
Abstract
The mechanisms of the influence of illumination on the formation Of Po rous silicon layers during anodization of p-type silicon has been anal yzed. The stage of additional oxidation of silicon from the doubly cha rge state to the quadruply charged state could involve participation o f a solid phase, which was a light-sensitive catalyst of the process. Uniform illumination of the substrate enhanced this process and as a c onsequence it increased the porosity and the photoluminescence emitted by such layers. Nonuniform illumination of the substrate resulted in a redistribution of porous silicon over the surface area of a sample a nd it altered its structure.