ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON

The behavior of deep level of carbon-relate radiation defects in p+-n structures made of high-resistivity silicon grown by the floating-zone method (FZ-Si) has been studied. The defects were introduced by irrad iation with alpha particles. The parameters of the defect centers were determined b the DLTS method. The kinetics of annealing of interstiti al carbon has been analyzed. The dominant role of oxygen, captured by high-resistivity Si during prolonged high-temperature thermal oxidatio n in the course of detector fabrication, has been demonstrated.