INDUCED POLARIZATION PHOTOSENSITIVITY IN N-GAP P-SI HETEROJUNCTIONS/

Single-crystal films of n-GaP of high structural quality, with thickne sses up to 6 mum, have been grown by vapor phase epitaxy in an open ch loride system. The photosensitivity spectra of n-GaP/p-Si heterojuncti ons were studied during oblique incidence of linearly polarized light on the sensitive planes of the n-GaP and p-Si. A polarization photosen sitivity has been observed. Features of this sensitivity as a function of the illumination geometry are discussed. Wide-band and selective p hotodetection of linearly polarized light can be achieved through rapi d changes in the illumination geometry for these heterojunctions.