OPTICAL CHARGING OF POROUS SILICON

Authors
PETROV AV PETRUKHIN AG
Citation
Av. Petrov et Ag. Petrukhin, OPTICAL CHARGING OF POROUS SILICON, Semiconductors, 28(1), 1994, pp. 49-51
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
1
Year of publication
1994
Pages
49 - 51
Database
ISI
SICI code
1063-7826(1994)28:1<49:OCOPS>2.0.ZU;2-G
Abstract
The accumulation of a charge on the order of 10(11) e/cm-2 has been ob served on the sur-face of porous silicon during illumination at photon energies of 1.2-5 eV. A study was made of the kinetics of the buildup and drain of the photoinduced charges of both signs. A possible relat ionship between the charging of the surface and a degradation of the l uminescence properties of the porous silicon is discussed.