CONVERSION OF INTRINSIC AND EXTRINSIC DEFECTS BY LASER-LIGHT IN LEAD SELENIDE AND ITS SOLID-SOLUTIONS

Authors
PLYATSKO SV GROMOVOI YS KADYSHEV SK KLIMOV AA
Citation
Sv. Plyatsko et al., CONVERSION OF INTRINSIC AND EXTRINSIC DEFECTS BY LASER-LIGHT IN LEAD SELENIDE AND ITS SOLID-SOLUTIONS, Semiconductors, 28(1), 1994, pp. 83-86
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
1
Year of publication
1994
Pages
83 - 86
Database
ISI
SICI code
1063-7826(1994)28:1<83:COIAED>2.0.ZU;2-0
Abstract
Electrical properties and the ESR of Pb1-xSnxSe single-crystal samples (0 less-than-or-equal-to x less-than-or-equal-to 0.24), both undoped and doped with manganese and europium, have been studied. In the trans mission region (homegaBAR < E(g)) the laser light changes the carrier density and mobility. It also changes the distribution of intrinsic an d extrinsic components among lattice sites. The donor level in the ban d gap (E(d) = -0.05 eV), which is manifested in the illuminated crysta ls, does not depend on the type of dopant. It belongs to intrinsic def ects.