PREPARATION OF POLYCRYSTALLINE SIC FILMS FOR SENSORS USED AT HIGH-TEMPERATURE

Authors
HOMMA T KAMIMURA K CAI HY ONUMA Y
Citation
T. Homma et al., PREPARATION OF POLYCRYSTALLINE SIC FILMS FOR SENSORS USED AT HIGH-TEMPERATURE, Sensors and actuators. A, Physical, 40(2), 1994, pp. 93-96
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
40
Issue
2
Year of publication
1994
Pages
93 - 96
Database
ISI
SICI code
0924-4247(1994)40:2<93:POPSFF>2.0.ZU;2-U
Abstract
Polycrystalline silicon carbide (SiC) films have been prepared by plas ma-assisted chemical vapour deposition. Pressure sensors are fabricate d using the polycrystalline SiC films as piezoresistive sensing elemen ts to show their applicability for a pressure sensor. The elements are formed by plasma etching. The sensitivity is 2.2 mV/(kg/cm2), and the non-linearity (deviation from linear relation) is less than 1% of ful l scale.