CHEMICAL BATH DEPOSITION OF ZNSE AND CUSE THIN-FILMS USING N,N-DIMETHYLSELENOUREA

Chemical bath deposition techniques for ZnSe and CuSe thin films using N,N-dimethylselenourea as the source of selenide ion are presented. F ilms of O.1 to 0.3 mum in thickness of ZnSe and CuSe are obtained in 2 to 10 h depositions at 50-degrees-C. The ZnSe films possess optical b andgap approximately 2.63 eV and suffer thermal degradation at tempera tures >350-degrees-C. They are very resistive, with sheet resistance a pproximately 10(12) OMEGA/square (approximately 0.3 mum film, 10 h dep osition). The CuSe films have sheet resistance approximately 10(3) OME GA/SQUARE (approximately 0.13 mum, 3 h deposition) but undergo thermal degradation at temperatures >200-degrees-C. Structure, composition, o ptical, and electrical characteristics of the films are discussed.