Ca. Estrada et al., CHEMICAL BATH DEPOSITION OF ZNSE AND CUSE THIN-FILMS USING N,N-DIMETHYLSELENOUREA, Journal of the Electrochemical Society, 141(3), 1994, pp. 802-806
Chemical bath deposition techniques for ZnSe and CuSe thin films using
N,N-dimethylselenourea as the source of selenide ion are presented. F
ilms of O.1 to 0.3 mum in thickness of ZnSe and CuSe are obtained in 2
to 10 h depositions at 50-degrees-C. The ZnSe films possess optical b
andgap approximately 2.63 eV and suffer thermal degradation at tempera
tures >350-degrees-C. They are very resistive, with sheet resistance a
pproximately 10(12) OMEGA/square (approximately 0.3 mum film, 10 h dep
osition). The CuSe films have sheet resistance approximately 10(3) OME
GA/SQUARE (approximately 0.13 mum, 3 h deposition) but undergo thermal
degradation at temperatures >200-degrees-C. Structure, composition, o
ptical, and electrical characteristics of the films are discussed.