In constructing symmetric self-electro-optic-effect-device-based, two-
dimensional information processing circuits, it is necessary to know t
he nonuniformity that can be tolerated of the reflectivity responses o
f the arrays of devices. It is also necessary to know the allowable no
nuniformity of the passive optical components used to direct beam arra
ys onto and between the active symmetric self-electro-optic-effect dev
ices. A method for determining the mutual tolerances is presented with
examples of the volumes of acceptable operation in the parameter spac
e of the circuits. Leakage between devices is considered, which leads
to acceptable regimes for those parameters that can be adjusted once t
he circuit has been constructed and to narrower regimes in which high
clock and cycle rates can be achieved.