INTERFACE ROUGHNESS AND ASYMMETRY IN INAS GASB SUPERLATTICES STUDIED BY SCANNING-TUNNELING-MICROSCOPY/

Authors
FEENSTRA RM COLLINS DA TING DZY WANG MW MCGILL TC
Citation
Rm. Feenstra et al., INTERFACE ROUGHNESS AND ASYMMETRY IN INAS GASB SUPERLATTICES STUDIED BY SCANNING-TUNNELING-MICROSCOPY/, Physical review letters, 72(17), 1994, pp. 2749-2752
Citations number
15
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
72
Issue
17
Year of publication
1994
Pages
2749 - 2752
Database
ISI
SICI code
0031-9007(1994)72:17<2749:IRAAII>2.0.ZU;2-H
Abstract
InAs/GaSb superlattices are studied in cross section by scanning tunne ling microscopy and spectroscopy. Electron subbands in 42 angstrom thi ck InAs layers are clearly resolved in the spectra. Roughness of the s uperlattice interfaces is quantitatively measured. Interfaces of InAs grown on GaSb are found to be rougher, with different electronic prope rties, than those of GaSb on InAs, indicating some intermixing in the former case.