INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS

Authors
DELLORTO T ALMEIDA J COLUZZA C BALDERESCHI A MARGARITONDO G CANTILE M YILDIRIM S SORBA L FRANCIOSI A
Citation
T. Dellorto et al., INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS, Applied physics letters, 64(16), 1994, pp. 2111-2113
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
16
Year of publication
1994
Pages
2111 - 2113
Database
ISI
SICI code
0003-6951(1994)64:16<2111:IPOABD>2.0.ZU;2-9
Abstract
Internal photoemission phototransport measurements revealed 0.27+/-0.0 4 eV conduction- and valence-band discontinuities induced by a Si intr alayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raise s the bands of the GaAs overlayer above that of the GaAs subtrate.