RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION

Authors
DADAP JI DORIS B DENG Q DOWNER MC LOWELL JK DIEBOLD AC
Citation
Ji. Dadap et al., RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION, Applied physics letters, 64(16), 1994, pp. 2139-2141
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
16
Year of publication
1994
Pages
2139 - 2141
Database
ISI
SICI code
0003-6951(1994)64:16<2139:ROAMAT>2.0.ZU;2-V
Abstract
Femtosecond pulses from a Kerr-Lens mode-locked Ti:sapphire laser are used to generate second harmonic from a series of native-oxidized Si(1 00)/SiO2 and hydrogen-terminated Si(100) samples prepared with systema tically varied interfacial microroughness with root-mean-square featur e heights ranging from 0.6 to 4.3 angstrom. Rotationally anisotropic s econd harmonic signals using different polarization configurations wer e measured in air and correlated with atomic force microscopy measurem ents. The results demonstrate rapid, noncontact, noninvasive measureme nt of Angstrom-level Si(100)/SiO2 interface roughness by optical secon d harmonic generation.