ALXGA1-XAS-GAAS-INYGA1-YAS QUANTUM-WELL HETEROSTRUCTURE LASERS WITH NATIVE-OXIDE CURRENT-BLOCKING WINDOWS FORMED ON METALLIZED DEVICES

Authors
MARANOWSKI SA CHEN EI HOLONYAK N RICHARD TA
Citation
Sa. Maranowski et al., ALXGA1-XAS-GAAS-INYGA1-YAS QUANTUM-WELL HETEROSTRUCTURE LASERS WITH NATIVE-OXIDE CURRENT-BLOCKING WINDOWS FORMED ON METALLIZED DEVICES, Applied physics letters, 64(16), 1994, pp. 2151-2153
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
16
Year of publication
1994
Pages
2151 - 2153
Database
ISI
SICI code
0003-6951(1994)64:16<2151:AQHLWN>2.0.ZU;2-#
Abstract
Data are presented demonstrating improved laser operation of AlxGa1-xA s-GaAs-InyGa1-yAs quantum well heterostructures modified with buried n ative oxide current-blocking windows. The windows are formed by low te mperature (425-degrees-C) anisotropic ''wet'' oxidation of an Al0.9Ga0 .1As layer exposed at the facets of metallized laser bars. These windo w devices operate continuously to powers as high as 248 mW/facet (unco ated, approximately 10.5 mum aperture), a apoproximately 25% improveme nt over nonwindow devices.