The second harmonic of the 794 nm output of a GaAlAs diode laser is ge
nerated in a LiIO3 crystal in an external ring enhancement cavity. The
dependence of the second-harmonic power on the input power has been m
easured and compared with the theory. The second-harmonic power of 7.4
muW at 397 nm has been obtained with an input fundamental power of 28
mW by using an 8-mm-long LiIO3 crystal.