THEORETICAL-STUDIES ON THE DIELECTRIC-BREAKDOWN OF THE SIO2 THIN-FILMS

Authors
YOKOZAWA A OHTA N MOCHIZUKI Y ISHITANI A TAKADA T
Citation
A. Yokozawa et al., THEORETICAL-STUDIES ON THE DIELECTRIC-BREAKDOWN OF THE SIO2 THIN-FILMS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 39(1), 1993, pp. 81-84
Citations number
11
Categorie Soggetti
Material Science","Metallurgy & Mining
Journal title
Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy → ACNP
ISSN journal
00408808
Volume
39
Issue
1
Year of publication
1993
Pages
81 - 84
Database
ISI
SICI code
0040-8808(1993)39:1<81:TOTDOT>2.0.ZU;2-M
Abstract
Electronic structures of oxygen deficiency in the SiO2 thin film are t heoretically studied by using the cluster models Of Si2O7H6 and Si2O6H 6 in order to reveal the mechanism of dielectric breakdown observed in the thin films. It is found that the oxygen deficiency induces electr on traps rather than hole traps. Furthermore, F- ions captured through the HF treatments are considered to be a key to introduce the oxygen deficiency in the SiO2 thin films.