A. Yokozawa et al., THEORETICAL-STUDIES ON THE DIELECTRIC-BREAKDOWN OF THE SIO2 THIN-FILMS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 39(1), 1993, pp. 81-84
Electronic structures of oxygen deficiency in the SiO2 thin film are t
heoretically studied by using the cluster models Of Si2O7H6 and Si2O6H
6 in order to reveal the mechanism of dielectric breakdown observed in
the thin films. It is found that the oxygen deficiency induces electr
on traps rather than hole traps. Furthermore, F- ions captured through
the HF treatments are considered to be a key to introduce the oxygen
deficiency in the SiO2 thin films.