LUMINESCENCE OF GAAS ALXGA1-XAS MULTIPLE-QUANTUM WELLS IN STRUCTURES FOR IR DETECTORS/

Authors
VARDANYAN BR REZVANOV RR CHUKICHEV MV YUNOVICH AE
Citation
Br. Vardanyan et al., LUMINESCENCE OF GAAS ALXGA1-XAS MULTIPLE-QUANTUM WELLS IN STRUCTURES FOR IR DETECTORS/, Semiconductors, 28(2), 1994, pp. 155-159
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
2
Year of publication
1994
Pages
155 - 159
Database
ISI
SICI code
1063-7826(1994)28:2<155:LOGAMW>2.0.ZU;2-Z
Abstract
A study has been made of the photoluminescence and cathodoluminescence spectra of GaAs/AlxGa1-xAs multiple quantum wells (x=0.30-0.35) grown by organometallic hydride epitaxy, and intended for IR detectors. Add itional lines and a broadening of spectral bands are observed. These c hanges can be explained primarily on the basis of fluctuations in the width of the quantum wells. Donor impurity states affect the spectra. The effect of factors manifested in the luminescence spectra on the IR absorption spectra is discussed.