RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/

Authors
BYSTROV SD TUAN L NOVIKOV SV SAVELEV IG
Citation
Sd. Bystrov et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/, Semiconductors, 28(2), 1994, pp. 180-182
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
2
Year of publication
1994
Pages
180 - 182
Database
ISI
SICI code
1063-7826(1994)28:2<180:RBGAHQ>2.0.ZU;2-D
Abstract
The changes in the state of the heterojunction in InP/In1-xGaxAs selec tively doped heterostructures with a 2D electron gas, grown by liquid- phase epitaxy, have been studied at various epitaxy temperatures T(ep) for the layers of the In1-xGaAs solid solution. Even a very slight de viation from the optimum epitaxy temperature T(ep) results in a decre ase in the carrier mobility of the 2D electron gas. This decrease is d ue to a degradation of the quality of the heterojunction, probably thr ough an increase in the concentration of charged defects and roughness .