CONTROLLING THE MODE COMPOSITION OF HIGH-POWER BURIED INGAASP GAAS LASERS WITH A WAVELENGTH OF 0.8-MU-M/

Authors
GARBUZOV DZ BORODITSKII ML ILINSKAYA ND LIVSHITZ DA MARINSKII DN RAFAILOV EU
Citation
Dz. Garbuzov et al., CONTROLLING THE MODE COMPOSITION OF HIGH-POWER BURIED INGAASP GAAS LASERS WITH A WAVELENGTH OF 0.8-MU-M/, Semiconductors, 28(2), 1994, pp. 191-194
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
2
Year of publication
1994
Pages
191 - 194
Database
ISI
SICI code
1063-7826(1994)28:2<191:CTMCOH>2.0.ZU;2-F
Abstract
Further research on the mode composition of InGaAsP lasers is reported . A theoretical model is proposed. This model can be used to calculate the mode composition of a laser. It explains the improvement in this composition with increasing temperature. A new design for single-mode lasers, with a narrow contact, is proposed on the basis of this study. Tests of this design show that power levels up to 200 mW can be achie ved in single-mode generation.