CERTAIN PROPERTIES OF POROUS-SILICON-BASED STRUCTURES FABRICATED BY ACOLORING ETCHING METHOD

The physical properties of silicon-hydrogen films (SHFs) grown by a me thod of coloring etching have been studied. The physical properties of Me-SHF-Si light-emitting structures based on them have also been stud ied. The refractive index of the film was found to be n = 1.8-3.0, the dielectric constant epsilon = 3.9, the resistivity rho = (0.6-2.5) X 10(9) OMEGA.cm, and the dielectric strength approximately 10(6) V/cm. The behavior of the voltage-capacitance characteristics as a function of the thickness of the SHF is similar to that of MIS structures with a ''thick'' or tunneling-thin insulator. The net charge in a structure with an SHF changes from positive to negative when the structure is i lluminated or cooled. The DLTS spectra of n-Si structures have a peak which should apparently be attributed to a generation of minority carr iers in an inversion layer.