VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

Authors
ALVARES KK BERMAN LS BOREVICH VA GREKHOV IV KARIMOV IN SOKOLOV NS SHULEKIN AF
Citation
Kk. Alvares et al., VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(2), 1994, pp. 211-212
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
2
Year of publication
1994
Pages
211 - 212
Database
ISI
SICI code
1063-7826(1994)28:2<211:VCOSF>2.0.ZU;2-L