PHYSICS-BASED EXPRESSIONS FOR THE NONLINEAR CAPACITANCES OF THE MESFET EQUIVALENT-CIRCUIT

In this paper, we present a simple physical determination of the nonli near capacitance parameters (C(gdo) and C(gso)) of the MESFET equivale nt circuit. Semiempirical models such as the Curtice and Statz-Pucel m odels, in conjunction with these physics-based expressions, are a fast tool for CAD of microwave integrated circuit simulation, saving the d esigner the tedious and sometimes difficult process of parameter extra ction and providing a better estimate of device statistics. Using the equations obtained in this work, a submicron gate length MESFET has be en simulated and theoretical results are in good agreement with the ex perimental measurements.