PROPERTIES OF GAAS SINGLE-CRYSTALS GROWN BY MOLECULAR-BEAM EPITAXY ATLOW-TEMPERATURES

Authors
CHEN NF HE HJ WANG YT LIN LY
Citation
Nf. Chen et al., PROPERTIES OF GAAS SINGLE-CRYSTALS GROWN BY MOLECULAR-BEAM EPITAXY ATLOW-TEMPERATURES, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 40(2), 1997, pp. 214-218
Citations number
14
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences → ACNP
ISSN journal
10016511
Volume
40
Issue
2
Year of publication
1997
Pages
214 - 218
Database
ISI
SICI code
1001-6511(1997)40:2<214:POGSGB>2.0.ZU;2-3
Abstract
Properties of GaAs single crystals grown at low temperatures by molecu lar beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in l attice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of an nealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restraine d.