MOSFET MODELING FOR ANALOG CIRCUIT CAD - PROBLEMS AND PROSPECTS

The requirements for good MOSFET modeling are discussed, as they apply to usage in analog and mixed analog-digital design. A set of benchmar k tests that can be easily performed by the reader are given, and it i s argued that most CAD models today cannot pass all the tests, even fo r simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are sugges ted. The issue of parameter extraction is addressed. Finally, the cont ext of model development and usage is considered, and it is argued tha t some of the factors responsible for the problems encountered in the modeling effort are of a nontechnical nature.