DESIGN TECHNIQUES FOR LOW-VOLTAGE HIGH-SPEED DIGITAL BIPOLAR CIRCUITS

Citation
B. Razavi et al., DESIGN TECHNIQUES FOR LOW-VOLTAGE HIGH-SPEED DIGITAL BIPOLAR CIRCUITS, IEEE journal of solid-state circuits, 29(3), 1994, pp. 332-339
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189200
Volume
29
Issue
3
Year of publication
1994
Pages
332 - 339
Database
ISI
SICI code
0018-9200(1994)29:3<332:DTFLHD>2.0.ZU;2-T
Abstract
This paper describes design techniques for multigigahertz digital bipo lar circuits with supply voltages as low as 1.5 V. Examples include a 2/1 multiplexer operating at 1 Gb/s with 1.2 mW power dissipation, a D -latch achieving a maximum speed of 2.2 GHz while dissipating 1.4 mW, two exclusive-OR gates with a delay less than 200 ps and power dissipa tion of 1.3 mW, and a buffer/level shifter having a delay of 165 ps wh ile dissipating 1.4 mW. The prototypes have been fabricated in a 1.5-m um 12-GHz bipolar technology. Simulations on benchmarks such as freque ncy dividers and line drivers indicate that for a 1.5-V supply, the pr oposed circuits achieve higher speed than their CMOS counterparts desi gned in a 0.5-mum CMOS process with zero threshold voltage.