ENHANCED FLUX-PINNING IN BI-2212 SINGLE-CRYSTALS BY PLANAR DEFECTS INTRODUCED VIA TI-SUBSTITUTION

Authors
LI TW DROST RJ KES PH TRAEHOLT C ZANDBERGEN HW HIEN NT MENOVSKY AA FRANSE JJM
Citation
Tw. Li et al., ENHANCED FLUX-PINNING IN BI-2212 SINGLE-CRYSTALS BY PLANAR DEFECTS INTRODUCED VIA TI-SUBSTITUTION, Physica. C, Superconductivity, 274(3-4), 1997, pp. 197-203
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
274
Issue
3-4
Year of publication
1997
Pages
197 - 203
Database
ISI
SICI code
0921-4534(1997)274:3-4<197:EFIBSB>2.0.ZU;2-U
Abstract
Ti-doped Bi-2212 single crystals were grown by the travelling solvent floating zone technique. Concentrations of about 1 at% and 2 at% (with respect to Cu) were shown to be incorporated in the structure which l eads to lowering of T-c to about 73 K from 85 K. High resolution micro scopy revealed high densities of planar defects parallel to the a,c-pl anes. The flux pinning properties at elevated temperatures are signifi cantly improved with respect to undoped single crystals.