Qs. Wang et al., A THERMODYNAMIC ANALYSIS OF SELECTIVE-AREA CVD OF TITANIUM NITRIDE COMPOUND BY THE ALTERNATING CYCLIC METHOD, Journal of the Electrochemical Society, 141(4), 1994, pp. 1086-1094
As the first step in investigating the selective area chemical vapor d
eposition of titanium compounds, which are of considerable interest in
semiconductor technology, a thermodynamic analysis has been performed
for the selective area chemical vapor deposition of titanium nitride,
over an extensive temperature, pressure, and composition range, using
the alternating cyclic (A.C.) process. In this approach TiN depositio
n via the hydrogen reduction of TiCl4 is followed cyclically by the et
ching of spurious nuclei from mask regions via an embedded disproporti
onation reaction. The thermodynamic calculations have been set up usin
g a first principles anal is, and carried out via the computer program
, SOLGASMIX, which is based on the minimization of the system's Gibbs
free energy. The first principles constraining conditions and the equi
librium constant constraining equations have then been employed as int
egrity checks of the outputs of the computer program. In addition, usi
ng the first principles approach, solid-vapor solubility curves have b
een derived for the cases examined. These calculations have indicated
that the selective deposition of TiN by this novel method is feasible
and have defined the parameter space in which to conduct the selective
area deposition in A.C. fashion.