THERMOELECTRIC PROPERTIES OF GAAS GA1-XALXAS HETEROJUNCTIONS IN THE FRACTIONAL QUANTUM HALL REGIME/

Citation
U. Zeitler et al., THERMOELECTRIC PROPERTIES OF GAAS GA1-XALXAS HETEROJUNCTIONS IN THE FRACTIONAL QUANTUM HALL REGIME/, Surface science, 305(1-3), 1994, pp. 91-95
Citations number
17
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
305
Issue
1-3
Year of publication
1994
Pages
91 - 95
Database
ISI
SICI code
0039-6028(1994)305:1-3<91:TPOGGH>2.0.ZU;2-E
Abstract
We present experimental data on the thermoelectric power of a two-dime nsional electron gas in the fractional quantum Hall regime. The thermo power is shown to be due to phonon-drag and therefore reflects the cou pling of phonons to the electronic quasiparticle states. The general b ehaviour of the thermoelectric power as a function of applied magnetic field and temperature is compared to recent theoretical predictions o f the electron-phonon drag in quantizing magnetic fields.