INTRINSIC QUANTUM HALL-EFFECT IN INAS GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS/

Authors
DALTON KSH VANDERBURGT M LAKRIMI M WARBURTON RJ DALY MS LUBCZYNSKI W MARTIN RW SYMONS DM BARNES DJ MIURA N NICHOLAS RJ MASON NJ WALKER PJ
Citation
Ksh. Dalton et al., INTRINSIC QUANTUM HALL-EFFECT IN INAS GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS/, Surface science, 305(1-3), 1994, pp. 156-160
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
305
Issue
1-3
Year of publication
1994
Pages
156 - 160
Database
ISI
SICI code
0039-6028(1994)305:1-3<156:IQHIIG>2.0.ZU;2-6
Abstract
We report a study of the quantum Hall effect and Shubnikov-de Haas osc illations in semimetallic type II heterostructures of the strained lay er system InAs/Ga1-xInxSb which are almost intrinsic. In high magnetic fields up to 50 T, rho(xy) has large peaks, demonstrating the high de gree of charge compensation in the system. Between these peaks, intrin sic quantum Hall minima are observed, where rho(xy) approaches zero.