QUANTUM TRANSPORT IN INAS1-XSBX INSB STRAINED-LAYER SUPERLATTICES/

The Shubnikov-de Haas (SdH) effect is observed in highly silicon doped InAs1-xSbx/InSb strained layer superlattices with nominal x values of 0.8 and 0.9. Virtually 100% activation of the silicon as a donor is f ound provided that the growth temperature is kept below about 350-degr ees-C. For the InAs0.2Sb0.8/InSb combination two-dimensional behaviour is observed. For InAs0.1Sb0.9/InSb up to three SdH periods are observ ed depending on the doping level and superlattice periodicity. These s eries do not follow the 1/cosTHETA dependence typical of 2D. These SdH peaks can be interpreted quantitatively as ''belly'', ''neck'' and '' elliptic'' orbits using a nearly-free electron model. Magnetic breakdo wn is believed to be present. Numerical calculations are presented for the band structure of the superlattices.