INTRINSIC BISTABILITY IN THE ELECTROLUMINESCENCE SPECTRUM AND CURRENT-VOLTAGE CHARACTERISTICS OF TRIPLE-BARRIER P-I-N RESONANT-TUNNELING DEVICES

The electroluminescence spectrum and current-voltage characteristics o f a forward biased triple-barrier p-i-n diode are investigated. The th in AlAs central barrier provides strong coupling between the two GaAs quantum wells. EL arises from the GaAs contact layers and both spatial ly direct and indirect recombination in the quantum we . The latter li ne is much the stronger and shows a marked red shift with increasing b ias. Two electron and two hole resonant peaks are observed in I(V) and in the intensity-bias plots of the EL emission lines. A pronounced in trinsic bistability is observed in both I(V) and the EL spectra. The e ffect of magnetic field on the EL spectra is investigated.