The low DC field conductance and the nonlinear I-V characteristics of
GaAs/Al0.70Ga0.30As superlattices have been measured in the presence o
f intense electric fields produced by UCSB's free-electron lasers. The
DC conductance exhibits oscillatory behavior as a function of teraher
tz field strength that resembles the zeroth-order Bessel function, J0(
edE(AC)/HomegaBAR), where e, d, and E(AC) are the electron charge, sup
erlattice period and AC field strength, respectively. The I-V characte
ristics, measured between 600 GHz and 3.1 THz, display new steps and p
lateaus. The dependence of the new structure of frequency suggests the
presence of new conduction channels that are most naturally assigned
to photon-mediated sequential tunneling.