INFORMATION ON THE CONFINEMENT POTENTIAL IN GAAS ALGAAS WIRES FROM MAGNETOLUMINESCENCE EXPERIMENTS/

Authors
HIRLER F STRENZ R KUCHLER R ABSTREITER G BOHM G WEIMANN G
Citation
F. Hirler et al., INFORMATION ON THE CONFINEMENT POTENTIAL IN GAAS ALGAAS WIRES FROM MAGNETOLUMINESCENCE EXPERIMENTS/, Surface science, 305(1-3), 1994, pp. 591-596
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
305
Issue
1-3
Year of publication
1994
Pages
591 - 596
Database
ISI
SICI code
0039-6028(1994)305:1-3<591:IOTCPI>2.0.ZU;2-V
Abstract
Shallow etched wires, dots and antidots have been prepared from remote -doped GaAs/AlGaAs quantum wells. The luminescence of electrons and ho les separated into adjacent lateral regions was studied with a magneti c field applied in the growth direction. The spatially indirect lumine scence was found to shift in energy and become direct at high magnetic fields. Details of the shape of the confinement potential were obtain ed by simulating the energy shift numerically.