A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS

We report the introduction and characterization of a metastable alpha- particle irradiation induced defect, Ealpha8, in n-GaAs by deep level transient spectroscopy (DLTS) using Schottky barrier diodes. The Ealph a8 defect, with an energy level 0.18 eV below the conduction band, as determined by low-field DLTS measurements, could be reversibly transfo rmed (removed and re-introduced) by employing zero and reverse bias an neals, respectively, in the 100-140 K temperature range. The transform ation kinetics of Ealpha8 displayed first order behaviour and was foun d to be charge state dependant.