K. Ishikura et al., GROWTH CONDITION DEPENDENCE OF CARBON-REDUCTION IN GAAS CHEMICAL BEAMEPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM, JPN J A P 2, 33(4A), 1994, pp. 120000494-120000496
It was found that carbon incorporation in GaAs chemical beam epitaxy (
CBE) using trisdimethylamino-arsine (TDMAAs) and trimethylgallium (TMG
a) strongly depends on the V/III ratio and the cracking temperature of
TDMAAs. Although a high concentration of carbon was incorporated for
the growth with low V/III ratio, the carbon concentration was reduced
to the order of 10(16) cm-3 at high V/III ratios. For the layer grown
using TDMAAs precracked at 550-degrees-C by a cracker cell, the carbon
concentration was above 10(19) cm-3. These results suggest that arsen
ic-dimethylamine (DMA) bonds rather than DMA itself play an important
role in the carbon gettering mechanism.