GROWTH CONDITION DEPENDENCE OF CARBON-REDUCTION IN GAAS CHEMICAL BEAMEPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM

It was found that carbon incorporation in GaAs chemical beam epitaxy ( CBE) using trisdimethylamino-arsine (TDMAAs) and trimethylgallium (TMG a) strongly depends on the V/III ratio and the cracking temperature of TDMAAs. Although a high concentration of carbon was incorporated for the growth with low V/III ratio, the carbon concentration was reduced to the order of 10(16) cm-3 at high V/III ratios. For the layer grown using TDMAAs precracked at 550-degrees-C by a cracker cell, the carbon concentration was above 10(19) cm-3. These results suggest that arsen ic-dimethylamine (DMA) bonds rather than DMA itself play an important role in the carbon gettering mechanism.