EPITAXIAL TERNARY REXMO1-XSI2 THIN-FILMS ON SI(100)

Reactive deposition epitaxy was used to synthesize thin layers of RexM o1-xSi2 on Si(100). In the case of x = 1, ReS2 layers of excellent cry stalline quality have been reported previously [J. E. Mahan, K. M. Gei b, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtu ally no alignment of the MoSi2 and the substrate is found, although th is silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.