CONCENTRATION PROFILES OF AS IN A GA RICH SOLUTION DURING ELECTROEPITAXY OF GAAS USING A COMPUTER-SIMULATION TECHNIQUE

Concentration profiles of As in front of a GaAs crystal interface grow ing in a Ga rich solution have been. determined during the electroepit axial growth of GaAs layers using a computer simulation technique. The effect due to Peltier heating or cooling and electromigration during growth have been incorporated to simulate the concentration profiles. The growth velocity in the absence and presence of convection, due to Peltier effect and electromigration, are calculated under different co nditions. It is observed that there is a transition in the movement of arsenic atoms towards the GaAs crystal interface from smooth and orde rly to turbulent and wavy as the intensity of electric field increases during the electroepitaxial growth of GaAs.