HALL-EFFECT AND IMPURITY LEVELS IN LEAD-DOPED INDIUM SELENIDE

Hall effect and deep hole level studies in indium selenide single crys tal doped with lead are reported. The temperature dependence of the ho le mobility can be interpreted by combining the homopolar optical phon on and the ionized impurity scatterings. Electrical properties above 1 80 K are dominated by an acceptor center at 0.48 eV from the valence b and. Moreover, two hole traps of 0.49 and 0.63 eV depths have been evi denced by deep-level transient spectroscopy measurements. These center s are probably associated with defects or defect complexes due to lead atoms precipitated in the interlayers of the crystal.