ANALYSIS OF THE VARIATION IN THE FIELD-DEPENDENT BEHAVIOR OF THERMALLY OXIDIZED TANTALUM OXIDE-FILMS

The field-dependent behavior of the conductivity (sigma) of thermally oxidized tantalum oxide films has been analyzed based on a model we de veloped previously [W. K. Choi, J. J. Delima, and A. E. Owen, Phys. St atus Solidi B 137, 345 (1986)]. Comparison with published data shows t hat the agreement in the log(sigma) versus the square root of the appl ied field is very good. The relative dielectric constants obtained fro m the simulations compared very favorably with the published results. The donor density for the tantalum oxide films were estimated to be be tween 1.7 X 10(14) and 2 X 10(17) cm-3 depending on the films preparat ion conditions.