2-DIMENSIONAL ELECTRON-TRANSPORT IN SELECTIVELY DOPED GA0.25IN0.75AS0.5P0.5 INP HETEROSTRUCTURE/

The Hall mobility of the two-dimensional electron gas in selectively d oped Ga0.25In0.75As0.5P0.5, lattice matched to InP, is calculated in t he temperature range from 4.2 to 300 K. The pseudo-two-mode nature of the polar optic phonons is considered in addition to deformation poten tial acoustic, piezoelectric, alloy, ionized impurity (remote and back ground), and surface roughness scattering. The energy-band nonparaboli city and screening effects on the scattering probabilities are incorpo rated. The Boltzmann equation is solved by an iterative method and com pared with the available experimental data. It is found that at low te mperature, with a suitable choice of the alloy scattering potential, t heory agrees with the experiment while there are discrepancies between the theory and experimental data on mobility as the temperature incre ases if one considers polar scattering by the longitudinal-optical vib rations. On the other hand, theoretical results for all temperatures c an be fitted with the experiment if in addition to the above scatterin g mechanisms, interaction with the transverse-optical phonons is assum ed to take place.