TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON

Authors
MAUCKNER G THONKE K BAIER T WALTER T SAUER R
Citation
G. Mauckner et al., TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON, Journal of applied physics, 75(8), 1994, pp. 4167-4170
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
8
Year of publication
1994
Pages
4167 - 4170
Database
ISI
SICI code
0021-8979(1994)75:8<4167:TLDOTP>2.0.ZU;2-N
Abstract
We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminesc ence. From the observed ''stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G( tau) and average recombination lifetimes [tau]. The average lifetimes feature a strong temperature dependence and a characteristic thermal a ctivation energy of 10-20 meV for low temperatures. Our results are di scussed within the models of quantum-confined exciton recombination an d surface state recombination.