OBSERVATION OF NONSTATIONARY TRANSPORT IN DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH SHUBNIKOV-DEHAAS OSCILLATIONS

The effect of the lateral electric field on the amplitude of Shubnikov -de Haas oscillations in Si metal-oxide-semiconductor field-effect tra nsistors (MOSFETs) with gate lengths ranging from 0.1 to 2 mum was stu died. The amplitude of these oscillations at liquid helium temperature is larger in the shortest devices and decreases less rapidly with the electric field. This result is interpreted as a decrease of the elect ron temperature. Indeed, in this case, the carrier transit time is sho rter than the energy relaxation time. This provides strong evidence fo r nonstationary transport in 0.1 mum n-MOSFET.