LOW-THRESHOLD, ROOM-TEMPERATURE PULSED OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH AN OPTIMIZED MULTIQUANTUM-WELL ACTIVE LAYER

Authors
UOMI K YOO SJB SCHERER A BHAT R ANDREADAKIS NC ZAH CE KOZA MA LEE TP
Citation
K. Uomi et al., LOW-THRESHOLD, ROOM-TEMPERATURE PULSED OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH AN OPTIMIZED MULTIQUANTUM-WELL ACTIVE LAYER, IEEE photonics technology letters, 6(3), 1994, pp. 317-319
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
3
Year of publication
1994
Pages
317 - 319
Database
ISI
SICI code
1041-1135(1994)6:3<317:LRPOO1>2.0.ZU;2-Y
Abstract
Room temperature, pulsed operation of 1.5 mum vertical-cavity surface- emitting laser is demonstrated by the optimization of an InGaAs/InGaAs P multi-quantum well active layer, especially the number of quantum we lls and the barrier thickness considering matched gain effect. Low thr eshold currents of 17 mA in 5 x 7 mum2-devices and 25 mA in 7 x 10 mum 2-devices were achieved.