LOW-THRESHOLD CONTINUOUS-WAVE SURFACE-EMITTING LASERS WITH ETCHED VOID CONFINEMENT

Authors
HANSING CC DENG H HUFFAKER DL DEPPE DG STREETMAN BG SARATHY J
Citation
Cc. Hansing et al., LOW-THRESHOLD CONTINUOUS-WAVE SURFACE-EMITTING LASERS WITH ETCHED VOID CONFINEMENT, IEEE photonics technology letters, 6(3), 1994, pp. 320-322
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
3
Year of publication
1994
Pages
320 - 322
Database
ISI
SICI code
1041-1135(1994)6:3<320:LCSLWE>2.0.ZU;2-5
Abstract
Data are presented demonstrating low threshold continuous wave operati on of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Contin uous wave thresholds of 470 muA have been for device diameters of appr oximately 4mum, and 1.1 mA for a device diameter of 10 mum. A two-step molecular beam epitaxial growth process is used which results in a bu ried etched void surrounding the active cavity of the laser.