HIGH-TEMPERATURE OPERATION OF CIRCULAR-GRATING SURFACE-EMITTING DBR LASERS FABRICATED ON AN INGAAS GAAS STRUCTURE/

Authors
FALLAHI M DION M CHATENOUD F TEMPLETON IM BARBER R
Citation
M. Fallahi et al., HIGH-TEMPERATURE OPERATION OF CIRCULAR-GRATING SURFACE-EMITTING DBR LASERS FABRICATED ON AN INGAAS GAAS STRUCTURE/, IEEE photonics technology letters, 6(3), 1994, pp. 326-329
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
3
Year of publication
1994
Pages
326 - 329
Database
ISI
SICI code
1041-1135(1994)6:3<326:HOOCSD>2.0.ZU;2-5
Abstract
We demonstrate high temperature operation of circular-grating surface- emitting distributed Bragg reflector lasers. The structure is a strain ed InGaAs/GaAs double quantum well. Circular gratings are defined by e lectron beam lithography. No epitaxial regrowth is used. A surface emi ssion power of over 40 mW under pulsed operation at temperatures of up to 80-degrees-C is obtained without saturation. A fixed single mode o peration was achieved over a temperature range of 60 degrees.