COMPARISON OF INGAAS INP PHOTODETECTORS FOR MICROWAVE APPLICATIONS/

Authors
PEREDO E DECOSTER D GOUY JP VILCOT JP CONSTANT M
Citation
E. Peredo et al., COMPARISON OF INGAAS INP PHOTODETECTORS FOR MICROWAVE APPLICATIONS/, Microwave and optical technology letters, 7(7), 1994, pp. 332-334
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
7
Issue
7
Year of publication
1994
Pages
332 - 334
Database
ISI
SICI code
0895-2477(1994)7:7<332:COIIPF>2.0.ZU;2-L
Abstract
The purpose of this article is to compare the microwave performance of three photodetector types, an InGaAs/InP p-i-n photodiode, an interdi gitated InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodiode, and an interdigitated InGaAs/InP photoconductor (PC). Static and dynam ic characterizations have been carried out at 1.3-mum wavelength using a directly modulated laser diode. Our experiments show that photocond uctive detectors exhibit the best sensitivity for frequencies up to 3 GHz. (C) 1994 John Wiley & Sons, Inc.