HIGHLY PRESSURIZED KR AGGLOMERATES IN SPUTTERED SI FILMS

Citation
Mjw. Greuter et al., HIGHLY PRESSURIZED KR AGGLOMERATES IN SPUTTERED SI FILMS, Thin solid films, 241(1-2), 1994, pp. 12-15
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
241
Issue
1-2
Year of publication
1994
Pages
12 - 15
Database
ISI
SICI code
0040-6090(1994)241:1-2<12:HPKAIS>2.0.ZU;2-Q
Abstract
High resolution electron microscopy experiments are presented for a pl asma-sputter-deposited Si film with a high Kr concentration. The amorp hous layer deposited shows an oscillating Kr concentration. The Kr res ides in very small agglomerates of size < 1 nm. Bending measurements s how that the pressure in the Kr agglomerates is very high, 3.9 GPa. Ha rdness measurements show that this pressure is limited by the fracture stress of the deposited film.