High resolution electron microscopy experiments are presented for a pl
asma-sputter-deposited Si film with a high Kr concentration. The amorp
hous layer deposited shows an oscillating Kr concentration. The Kr res
ides in very small agglomerates of size < 1 nm. Bending measurements s
how that the pressure in the Kr agglomerates is very high, 3.9 GPa. Ha
rdness measurements show that this pressure is limited by the fracture
stress of the deposited film.