SILICATE GLASS-FILMS DEPOSITED BY REACTIVE RF MAGNETRON SPUTTERING - ELECTRICAL CHARACTERIZATION

Lead silicate glassy and composite films were deposited on different s ubstrates by reactive r.f. magnetron sputtering. Three different plasm a compositions were used (pure Ar, Ar 5%O2 and Ar20%H-2) in order to s tudy both the compositional changes and the electrical behaviour of th e deposited films. X-ray diffraction analysis showed the presence of s mall Pb crystallites embedded in the silicate matrix of the films. The crystallite dimensions increased with increasing film thickness until it reached a steady value. The stoichiometry of the films was determi ned using Rutherford backscattering analysis, whereas the electrical p roperties were studied by measuring the sheet resistance of the films as a function of the temperature in the range 80 300 K. The correlatio n between the stoichiometry, microstructure and electrical sheet resis tance is discussed.