TAILORING SILICON-OXIDE FILM PROPERTIES BY TUNING THE LASER BEAM-TO-SUBSTRATE DISTANCE IN ARF LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION

ArF excimer laser-induced chemical vapor deposition from SiH4 and N2O precursors in parallel configuration offers unique possibilities for f ine and effective control of both the deposition rate and film propert ies by tuning exclusively the distance between the laser beam and the substrate surface, even if the gas composition and pressure remain con stant. By depositing from N2O-rich mixtures, the deposition rate, dens ity and structure of the films can be varied in a controlled way, whil e lower nitrous oxide-to-silane ratios allow tailoring of film composi tion as well. Layer structures of designed properties can be deposited by simple realignment of the position of the laser beam.